INTERNAL TERMOCOMPENSATION SHEME ANALISYS FOR PIEZORESISTIVE PRESSURE SENSORS 

Arina A. Adamova, Candidate of technical sciences, associate professor, associate professor of the sub-department of design and production technology of the electronic equipment, Bauman Moscow State Technical University (5 2-ya Baumanskaya street, Moscow, Russia), E-mail: aadamova@bmstu.ru
Stanislav G. Sementsov, Doctor of technical sciences, associate professor, professor of the sub-department of design and production technology of the electronic equipment, Bauman Moscow State Technical University (5 2-ya Baumanskaya street, Moscow, Russia), E-mail: siemens_off@mail.ru
Aleksandr V. Betskov, Doctor of technical sciences, associate professor, head of the sub- department of information technology, Management Academy of the Ministry of the Interior of the Russian Federation (8 Zoi i Aleksandra Kosmodemyanskikh street, Moscow, Russia), E-mail: aumvd10@mail.ru 

Background. The article discusses integrated piezoresistive converters based on monocrystalline silicon. One of the main reasons leading to errors in piezoresistive transducers is their sensitivity to temperature changes. Finding solutions to reduce temperature measurement errors is an urgent task. Materials and methods. Converters without a thermal compensation circuit built into the measuring bridge and with such a circuit are considered. A circuit analysis of the operation of the thermal compensation circuit and the features of its behavior in a wide temperature range is carried out. The reasons for the occurrence of temperature effects that determine the accuracy of the converters are indicated. Results. Ways to improve the built-in thermal compensation circuit are shown by forming the necessary temperature dependence of the currents of the measuring bridge elements. Conclusions. The built-in thermal compensation circuit provides a significant improvement in temperature stability over the entire temperature range, and the introduction of additional elements into it makes it possible to form the necessary dependence of the measuring bridge current on temperature. 

temperature error, measuring bridge, piezoresistive converter, monocrystalline silicon, ICP-integrated pressure converter 

Adamova A.A., Sementsov S.G., Betskov A.V. Internal termocompensation sheme analisys for piezoresistive pressure sensors. Nadezhnost' i kachestvo slozhnykh sistem = Reliability and quality of complex systems. 2024;(2):80–87. (In Russ.). doi: 10.21685/2307-4205-2024-2-9